HIGH-PERFORMANCE SALICIDE SHALLOW-JUNCTION CMOS DEVICES FOR SUBMICROMETER VLSI APPLICATION IN TWIN-TUB-VI

被引:15
作者
LU, CY [1 ]
SUNG, JJ [1 ]
KIRSCH, HC [1 ]
TSAI, NS [1 ]
LIU, RC [1 ]
MANOCHA, AS [1 ]
HILLENIUS, SJ [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1109/16.43677
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:2530 / 2536
页数:7
相关论文
共 14 条
[11]  
Sun J. Y., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P236
[12]  
SUNG JM, 1989, IN PRESS J ELECTROCH
[13]  
TSAI MY, 1983, J APPL PHYS, V50, P353
[14]   THE TEMPERATURE-DEPENDENCE OF THRESHOLD VOLTAGES IN SUBMICROMETER CMOS [J].
TZOU, JJ ;
YAO, CC ;
CHEUNG, R ;
CHAN, H .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (05) :250-252