TEMPERATURE CONTROL OF SILICON-GERMANIUM ALLOY EPITAXIAL-GROWTH ON SILICON SUBSTRATES BY INFRARED TRANSMISSION

被引：19

作者：

STURM, JC

GARONE, PM

SCHWARTZ, PV

机构：

[1] Department of Electrical Engineering, Princeton University, Princeton

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 01期

关键词：

D O I：

10.1063/1.347705

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the application of the technique of infrared transmission to measure the temperature of silicon wafers during the growth of silicon-germanium alloy heteroepitaxial layers in a rapid thermal processing system. The silicon-germanium alloy layers have negligible absorption at 1.3 and 1.55-mu-m over wide ranges of thickness, composition, and strain condition. The substantial improvement of the uniformity of layers grown using the technique to measure the temperature for feedback control of the lamp power has also been demonstrated.

引用

页码：542 / 544

页数：3

共 11 条

[1] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS
BRAUNSTEIN, R
MOORE, AR
HERMAN, F
[J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710
[2] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
CHELIKOWSKY, JR
COHEN, ML
[J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582
[3] SILICON VAPOR-PHASE EPITAXIAL-GROWTH CATALYSIS BY THE PRESENCE OF GERMANE
GARONE, PM
STURM, JC
SCHWARTZ, PV
SCHWARZ, SA
WILKENS, BJ
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (13) : 1275 - 1277
[4] OPTICAL-ABSORPTION COEFFICIENT OF SILICON AT 1.152-MU AT ELEVATED-TEMPERATURES
JELLISON, GE
LOWNDES, DH
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (07) : 594 - 596
[5] BANDGAP AND TRANSPORT-PROPERTIES OF SI1-XGEX BY ANALYSIS OF NEARLY IDEAL SI/SI1-XGEX/SI HETEROJUNCTION BIPOLAR-TRANSISTORS
KING, CA
HOYT, JL
GIBBONS, JF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) : 2093 - 2104
[6] ELECTRICAL AND MATERIAL QUALITY OF SI1-XGEX/SI P-N HETEROJUNCTIONS PRODUCED BY LIMITED REACTION PROCESSING
KING, CA
HOYT, JL
NOBLE, DB
GRONET, CM
GIBBONS, JF
SCOTT, MP
KAMINS, TI
LADERMAN, SS
[J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (04) : 159 - 161
[7] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI
MACFARLANE, GG
MCLEAN, TP
QUARRINGTON, JE
ROBERTS, V
[J]. PHYSICAL REVIEW, 1958, 111 (05): : 1245 - 1254
[8] 75-GHZ FT SIGE-BASE HETEROJUNCTION BIPOLAR-TRANSISTORS
PATTON, GL
COMFORT, JH
MEYERSON, BS
CRABBE, EF
SCILLA, GJ
DEFRESART, E
STORK, JMC
SUN, JYC
HARAME, DL
BURGHARTZ, JN
[J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (04) : 171 - 173
[9] SILICON TEMPERATURE-MEASUREMENT BY INFRARED TRANSMISSION FOR RAPID THERMAL-PROCESSING APPLICATIONS
STURM, JC
SCHWARTZ, PV
GARONE, PM
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (10) : 961 - 963
[10] STANDARD THERMODYNAMIC FUNCTIONS FOR FORMATION OF ELECTRONS AND HOLES IN GE, SI, GAAS, AND GAP
THURMOND, CD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : 1133 - 1141

← 1 2 →