QUATERNARY ALLOY INFRARED HETEROJUNCTION DETECTORS

[1] DISTRIBUTION COEFFICIENTS OF GA, AS, AND P DURING GROWTH OF INGAASP LAYERS BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 34 (01) : 132 - 138

[2] ANTYPAS GA, 1977, GALLIUM ARSENIDE REL, P96

[3] ANTYPAS GA, 1973, GALLIUM ARSENIDE REL, P48

[4] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1750 - 1757

[5] BOGATOV AP, 1975, SOV PHYS SEMICOND+, V9, P1282

[6] SMALL-AREA, HIGH-RADIANCE CW INGAASP LEDS EMITTING AT 1.2 TO 1.3 MUM [J]. ELECTRONICS LETTERS, 1977, 13 (16) : 484 - 485

[7] DOLGINOV LM, 1975, SOV PHYS SEMICOND+, V9, P871

[8] THE PREDICTION OF SEMICONDUCTING PROPERTIES IN INORGANIC COMPOUNDS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (04) : 305 - 314

[9] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (05) : 283 - 285

[10] HSIEH JJ, 1977, GALLIUM ARSENIDE REL, P37

[1] DISTRIBUTION COEFFICIENTS OF GA, AS, AND P DURING GROWTH OF INGAASP LAYERS BY LIQUID-PHASE EPITAXY [J]. JOURNAL OF CRYSTAL GROWTH, 1976, 34 (01) : 132 - 138

[2] ANTYPAS GA, 1977, GALLIUM ARSENIDE REL, P96

[3] ANTYPAS GA, 1973, GALLIUM ARSENIDE REL, P48

[4] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (12) : 1750 - 1757

[5] BOGATOV AP, 1975, SOV PHYS SEMICOND+, V9, P1282

[6] SMALL-AREA, HIGH-RADIANCE CW INGAASP LEDS EMITTING AT 1.2 TO 1.3 MUM [J]. ELECTRONICS LETTERS, 1977, 13 (16) : 484 - 485

[7] DOLGINOV LM, 1975, SOV PHYS SEMICOND+, V9, P871

[8] THE PREDICTION OF SEMICONDUCTING PROPERTIES IN INORGANIC COMPOUNDS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (04) : 305 - 314

[9] ROOM-TEMPERATURE OPERATION OF GALNASP-LNP DOUBLE-HETEROSTRUCTURE DIODE LASERS EMITTING AT 1.1 MU-M [J]. APPLIED PHYSICS LETTERS, 1976, 28 (05) : 283 - 285

[10] HSIEH JJ, 1977, GALLIUM ARSENIDE REL, P37