QUATERNARY ALLOY INFRARED HETEROJUNCTION DETECTORS

[11] PHOTOEMISSION FROM CESIUM-OXIDE-ACTIVATED IN GAASP [J]. APPLIED PHYSICS LETTERS, 1973, 22 (06) : 270 - 271

[12] BANDGAP AND LATTICE-CONSTANT OF GAINASP AS A FUNCTION OF ALLOY COMPOSITION [J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (03) : 635 - 644

[13] MATERIAL-DISPERSION-LIMITED OPERATION OF HIGH-BIT-RATE OPTICAL-FIBRE DATA LINKS USING LEDS [J]. ELECTRONICS LETTERS, 1977, 13 (20) : 605 - 607

[14] NEUBERGER M, 1972, HDB ELECTRONIC MATER, V2, pR3

[15] GAINASP-INP DOUBLE HETEROSTRUCTURE LASERS PREPARED BY A NEW LPE APPARATUS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (10) : 2003 - 2004

[16] SURFACE EMITTING LEDS FOR 1.2-1.3 MU M WAVELENGTH WITH GAINASP-INP DOUBLE HETEROSTRUCTURES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) : 1693 - 1694

[17] Onton A., 1973, LUMINESCENCE CRYSTAL, P431, DOI 10.1007/978-1-4684-2043-2_58

[18] EFFICIENT LATTICE-MATCHED DOUBLE-HETEROSTRUCTURE LEDS AT 1.1 MU-M FROM GA-XIN-1-XAS-YP-1-Y [J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 499 - 501

[19] LPE IN1-XGAXP1-ZASZ(X-0.12,Z-0.26) DH LASER WITH MULTIPLE THIN-LAYER (LESS-THAN 500 A) ACTIVE REGION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 288 - 290

[20] GROWTH AND CHARACTERIZATION OF INGAASP-INP LATTICE-MATCHED HETEROJUNCTIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 932 - 937

[11] PHOTOEMISSION FROM CESIUM-OXIDE-ACTIVATED IN GAASP [J]. APPLIED PHYSICS LETTERS, 1973, 22 (06) : 270 - 271

[12] BANDGAP AND LATTICE-CONSTANT OF GAINASP AS A FUNCTION OF ALLOY COMPOSITION [J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (03) : 635 - 644

[13] MATERIAL-DISPERSION-LIMITED OPERATION OF HIGH-BIT-RATE OPTICAL-FIBRE DATA LINKS USING LEDS [J]. ELECTRONICS LETTERS, 1977, 13 (20) : 605 - 607

[14] NEUBERGER M, 1972, HDB ELECTRONIC MATER, V2, pR3

[15] GAINASP-INP DOUBLE HETEROSTRUCTURE LASERS PREPARED BY A NEW LPE APPARATUS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (10) : 2003 - 2004

[16] SURFACE EMITTING LEDS FOR 1.2-1.3 MU M WAVELENGTH WITH GAINASP-INP DOUBLE HETEROSTRUCTURES [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (09) : 1693 - 1694

[17] Onton A., 1973, LUMINESCENCE CRYSTAL, P431, DOI 10.1007/978-1-4684-2043-2_58

[18] EFFICIENT LATTICE-MATCHED DOUBLE-HETEROSTRUCTURE LEDS AT 1.1 MU-M FROM GA-XIN-1-XAS-YP-1-Y [J]. APPLIED PHYSICS LETTERS, 1976, 28 (09) : 499 - 501

[19] LPE IN1-XGAXP1-ZASZ(X-0.12,Z-0.26) DH LASER WITH MULTIPLE THIN-LAYER (LESS-THAN 500 A) ACTIVE REGION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (04) : 288 - 290

[20] GROWTH AND CHARACTERIZATION OF INGAASP-INP LATTICE-MATCHED HETEROJUNCTIONS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 932 - 937