EFFECT OF IMPURITIES ON SIMS

被引：4

作者：

COLLIGON, JS

KIRIAKIDIS, G

机构：

[1] Department of Electrical Engineering, University of Salford, Salford

来源：

VACUUM | 1979年 / 29卷 / 10期

关键词：

D O I：

10.1016/0042-207X(79)90314-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results showing the effect of implantation of various species into copper on the secondary Cu+ ion signal are presented. Preliminary analysis indicates that both a physical change in the sample induced by the implantation and a chemical effect due to the presence of the implant species are responsible for the observed changes. © 1979.

引用

页码：357 / 360

页数：4

共 11 条

[1] ION MICROPROBE MASS ANALYZER [J].

ANDERSEN, CA ;

HINTHORNE, JR .

SCIENCE, 1972, 175 (4024) :853-+

[2] THERMODYNAMIC APPROACH TO QUANTITATIVE INTERPRETATION OF SPUTTERED ION MASS-SPECTRA [J].

ANDERSEN, CA ;

HINTHORNE, JR .

ANALYTICAL CHEMISTRY, 1973, 45 (08) :1421-1438

[3]

ANDERSEN CA, 1969, INT J MASS SPECTROM, V2, P61

[4]

ANDERSEN HH, 1973, 1972 INT C ION SURF, P63

[5]

BROWN WL, 1977, 7 P INT C AT COLL SO

[6]

Jurela Z., 1972, Radiation Effects, V13, P167, DOI 10.1080/00337577208231176

[7] SECONDARY ION MASS-SPECTROMETRIC STUDY OF SELF-SPUTTERED COPPER [J].

KIRIAKIDIS, G ;

COLLIGON, JS ;

CHENAKIN, SP .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1979, 41 (02) :119-124

[8] RBS TECHNIQUE FOR MEASUREMENT OF THE EROSION RATE OF ION-IMPLANTED FILMS [J].

KIRIAKIDIS, G ;

CHRISTODOULIDES, CE ;

CARTER, G ;

COLLIGON, JS .

APPLIED PHYSICS, 1979, 19 (02) :191-194

[9] SECONDARY ION EMISSION FROM SILICON AND SILICON-OXIDE [J].

MAUL, J ;

WITTMAACK, K .

SURFACE SCIENCE, 1975, 47 (01) :358-369

[10]

SCHROEER JM, 1973, SURF SCI, V34, P171

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