ATOMIC LAYER EPITAXY OF INP

被引：19

作者：

BERTONE, D

机构：

[1] CSELT, Centro Studi e Laboratori Telecomunicazioni, Torino, 10148

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 03期

关键词：

ATOMIC LAYER EPITAXY; INP; SELECTIVE AREA EPITAXY;

D O I：

10.1007/BF02660452

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we will discuss the growth conditions for ALE of InP. Growth experiments were carried out in a LP-MOCVD system with a fast switch gas manifold. InP layers were deposited by pulsing TMIn and PH3, using Argon as carrier gas. A self limiting growth rate at 1 ML/cycle has been obtained with a substrate temperature as low as 320-360-degrees-C. InP epitaxial layers were grown on GaAs and InP substrates, and on GaInAs(P) layers previously deposited by conventional MOCVD. Selective area epitaxy on InP using a Si3N4 mask was also demonstrated. Results of this study are very encouraging for hybrid MOCVD/ALE growth of In-based compounds.

引用

页码：265 / 268

页数：4

共 9 条

[1] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF INDIUM-PHOSPHIDE BY PULSING PRECURSORS [J].