STERIC HINDRANCE EFFECTS IN ATOMIC LAYER EPITAXY OF INAS

被引：24

作者：

JEONG, WG ^{[1
]}

MENU, EP ^{[1
]}

DAPKUS, PD ^{[1
]}

机构：

[1] UNIV SO CALIF,CTR PHOTON TECHNOL,LOS ANGELES,CA 90089

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 03期

关键词：

D O I：

10.1063/1.101920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：244 / 246

页数：3

共 15 条

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[5]

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[6]

DOI A, 1988, JPN J APPL PHYS 1, V27, P795, DOI 10.1143/JJAP.27.795

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L521-L523

[9] ATOMIC LAYER EPITAXY OF THE GA-AS-IN-AS SUPERALLOY [J].

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APPLIED PHYSICS LETTERS, 1987, 51 (22) :1830-1832

[10] DEPOSITION MECHANISM OF GAAS EPITAXY [J].

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