EFFECTS OF GROWTH TEMPERATURE ON TDDB CHARACTERISTICS OF N2O-GROWN OXIDES

被引：31

作者：

YOON, GW

JOSHI, AB

KIM, J

LO, GQ

KWONG, DL

机构：

[1] Department of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas, Austin

来源：

IEEE ELECTRON DEVICE LETTERS | 1992年 / 13卷 / 12期

关键词：

D O I：

10.1109/55.192859

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, effects of oxide growth temperature on time-dependent dielectric breakdown (TDDB) characteristics of thin (115 angstrom) N2O-grown oxides are investigated and compared with those for conventional O2-grown SiO2 films with identical thickness. Results show that TDDB characteristics of N2O oxides are strongly dependent on the growth temperature and, unlike conventional SiO2, TDDB properties are much degraded for N2O oxides with an increase in growth temperature. Large undulations at the Si / SiO2 interface, caused by locally retarded oxide growth due to interfacial nitrogen, are suggested as a likely cause of degradation of TDDB characteristics in N2O oxides grown at higher temperatures.

引用

页码：606 / 608

页数：3

共 13 条

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