STACKING-FAULTS UNDER REOXIDIZED NITRIDED OXIDES

被引:3
作者
KOLACHINA, SK
LAL, R
机构
[1] Department of Electrical Engineering, Indian Institute of Technology, Powai, Bombay
关键词
D O I
10.1063/1.107907
中图分类号
O59 [应用物理学];
学科分类号
摘要
Processing induced stacking faults below reoxidized nitrided oxides have been observed by electron beam induced current (EBIC) imaging and by secondary electron imaging after preferential etching. Comparative studies of stacking fault lengths with those of dry and nitrided oxides show that the growth rates of stacking faults are anomalously high during reoxidation. A large proportion of these stacking faults show electrical activity in EBIC images. This is reflected in the degradation of effective generation lifetimes as seen in transient capacitance measurements.
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页码:438 / 440
页数:3
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