NOISE TEMPERATURE IN GAAS EPI-LAYER FOR FETS

被引：5

作者：

GRAFFEUIL, J ^{[1
]}

SAUTEREAU, JF ^{[1
]}

BLASQUEZ, G ^{[1
]}

ROSSEL, P ^{[1
]}

机构：

[1] CNRS,AUTOMAT & ANAL SYST LAB,F-31055 TOULOUSE,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/T-ED.1978.19142

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：596 / 599

页数：4

共 16 条

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[5] EFFECTS OF INTERVALLEY SCATTERING ON NOISE IN GAAS AND INP FIELD-EFFECT TRANSISTORS [J].

FREY, J .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (12) :1298-1303

[6]

FREY J, 1975, CORNELL ELECTRICAL E, P277

[7] STUDY OF ELECTRON-ENERGY RELAXATION-TIMES IN GAAS AND INP [J].

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[8]

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[9]

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[10]

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