DANGLING BONDS IN DOPED AMORPHOUS-SILICON - EQUILIBRIUM, RELAXATION, AND TRANSITION ENERGIES

被引：38

作者：

BRANZ, HM

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.39.5107

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5107 / 5115

页数：9

共 54 条

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