Spatial distribution of electroluminescence in ZnSe diodes with epitaxial I layer

被引：1

作者：

Jones, APC

Brinkman, AW

Russell, GJ

Woods, J

Wright, PJ

Cockayne, B

机构：

[1] Univ Durham, Sci Labs, Dept Appl Phys & Elect, Durham DH1 3LE, England

[2] Royal Signals & Radar Estab, Great Malvern WR14 3PS, Worcs, England

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1986年 / 1卷 / 01期

关键词：

D O I：

10.1088/0268-1242/1/1/004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of a ZnSe light-emitting diode with an epitaxial ZnS I layer is described. The spatial distribution of injection electroluminescence from this device is superior to that from MIS diodes with polycrystalline I layers.

引用

页码：41 / 44

页数：4

共 15 条

[1] GLASS-SEALED GAAS-ALGAAS TRANSMISSION PHOTOCATHODE
ANTYPAS, GA
EDGECUMBE, J
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (07) : 371 - 372
[2] CAMMACK D, 1984, SOC INF DISPL SID, P34
[3] FAN XW, 1984, J LUMIN, V31-2, P957, DOI 10.1016/0022-2313(84)90172-8
[4] A REEVALUATION OF THE MEANING OF CAPACITANCE PLOTS FOR SCHOTTKY-BARRIER-TYPE DIODES
FONASH, SJ
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 1966 - 1975
[5] Fowler M. T., 1985, Journal of Molecular Electronics, V1, P93
[6] INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES
JOHNSON, WC
PANOUSIS, PT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 965 - &
[7] FORWARD-BIAS ELECTROLUMINESCENCE IN ZNSE DIODES
LAWTHER, C
WOODS, J
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (02): : 693 - 702
[8] BLUE-LIGHT EMISSION IN FORWARD-BIASED ZNS MIS DIODES
LAWTHER, C
WOODS, J
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 50 (02): : 491 - 502
[9] YELLOW LIGHT-EMITTING ZNSE DIODE
PARK, YS
SHIN, BK
GEESNER, CR
[J]. APPLIED PHYSICS LETTERS, 1972, 21 (12) : 567 - &
[10] A COMPARISON OF THE PHOTOVOLTAIC AND ELECTROLUMINESCENT EFFECTS IN GAP LANGMUIR-BLODGETT FILM DIODES
PETTY, MC
BATEY, J
ROBERTS, GG
[J]. IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1985, 132 (03): : 133 - 139

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