PHOTO-LUMINESCENT CHARACTERIZATION OF GAAS SOLAR-CELLS

被引：20

作者：

PETTIT, GD

WOODALL, JM

HOVEL, HJ

机构：

[1] IBM Thomas J. Watson Research Center, Yorktown Heights

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 04期

关键词：

D O I：

10.1063/1.91112

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescence excitation measurements are shown to accurately determine the spectral response of Ga1-xAlxAs-GaAs heterojunction solar cells. The technique is applicable to as-grown structures prior to processing into final devices and can also be used to study postgrowth techniques designed to enhance the spectral response of such devices. The measurements indicate that some surface recombination passivation is obtained with anodization.

引用

页码：335 / 337

页数：3

共 7 条

[1] PLASMA OXIDATION OF GAAS [J].