GROWTH OF 40 MM DIAMETER SILICON CRYSTALS BY A PEDESTAL TECHNIQUE USING ELECTRON-BEAM HEATING

被引:12
作者
CISZEK, TF
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D O I
10.1016/0022-0248(72)90298-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:281 / +
页数:1
相关论文
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