THERMAL QUENCHING PROPERTIES OF ER-DOPED GAP

被引：26

作者：

WANG, XZ ^{[1
]}

WESSELS, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 12期

关键词：

D O I：

10.1063/1.111884

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescent properties of the Er-doped epitaxial layers of GaP prepared by metalorganic vapor phase epitaxy were studied as a function of temperature. Strong characteristic Er3+ intra-4f-shell emission is observed over the temperature range of 12-300 K. The integrated intensity of the 0.805-eV emission is only weakly temperature dependent, decreasing by a factor of 2 as the temperature increases from 12 to 300 K. The observation of minimal thermal quenching indicates that Er-doped GaP is a promising material for optical devices emitting at 1.54 mum and operating at room temperature.

引用

页码：1537 / 1539

页数：3

共 15 条

[1] OPTICAL STUDIES OF ERBIUM EXCITED-STATES IN GA0.55AL0.45AS [J].