THERMAL QUENCHING OF ER-3+-RELATED LUMINESCENCE IN IN1-XGAXP

被引：66

作者：

NEUHALFEN, AJ ^{[1
]}

WESSELS, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 21期

关键词：

D O I：

10.1063/1.106886

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermal quenching of the characteristic intracenter luminescence from trivalent Er ions in In1-xGaxP layers was investigated. The Er-doped InGaP alloys were prepared by metalorganic vapor phase epitaxy with compositions ranging from x = 0 to 0.31. A thermally activated luminescence quenching was observed with an activation energy that depended on the alloy composition. From measurements of the thermal quenching of the photoluminescence, the energy level of an erbium-related trapping center in the alloys was determined. The variation of the position of the Er-related energy level as a function of alloy composition is explained in terms of a vacuum-referred binding energy model.

引用

页码：2657 / 2659

页数：3

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