A CASE-STUDY OF STATISTICAL PROCESS-CONTROL ON THE PRIME PROCESS USING PLASMASK 302U

被引：1

作者：

ARSHAK, KI

MCDONAGH, D

BRADDELL, J

MURPHY, E

GLEESON, P

机构：

[1] NATL MICROELECTR RES CTR,PROSPECT ROW,CORK,IRELAND

[2] UNIV LIMERICK,DEPT MATH & STAT,LIMERICK,IRELAND

来源：

MICROELECTRONICS AND RELIABILITY | 1995年 / 35卷 / 02期

关键词：

D O I：

10.1016/0026-2714(95)90087-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

'In this paper, Statistical Process Control (SPC) and statistically designed experiments will be used to optimise a recently developed resist schemes i.e., PRIME (Positive Resist Image by dry Etching). Orthogonal experiments are designed and conducted in order to produce 0.2 mu m lines repeatably in PLASMASK 302U resist. Design rules of 0.1 mu m are used due to proximity effects. The data is then explored and analysed using surface plots, boxplots, analysis of variance (ANOVA) and linear regression. It was deduced that e-beam dose and 2nd step etch time were the most significant parameters in the process. Linewidth of 0.2 mu m and below were achieved with low values of e-beam dose (250-350 mu C/cm(2)) and high values of silylation temperature (205-215 degrees C). The optimum range for NUV flood dose was easily found.

引用

页码：209 / 224

页数：16

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