A NOVEL HIGH-GAIN IMAGE SENSOR CELL BASED ON SI P-N APD IN CHARGE STORAGE MODE-OPERATION

被引：9

作者：

KOMOBUCHI, H ^{[1
]}

ANDO, T ^{[1
]}

机构：

[1] SHIZUOKA UNIV,ELECTR RES INST,HAMAMATSU,SHIZUOKA 432,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 08期

关键词：

14;

D O I：

10.1109/16.57137

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel high-gain image sensor cell based on Si-avalanche p-n photodiodes in the charge-storage mode from below to above the breakdown voltage region without avalanche discharge during the readout time period was proposed and demonstrated by use of a test circuit composed of discrete elements. Photo-electron conversion characteristics of a proposed dual-gate avalanche photodiode (APD) image sensor cell in below-breakdown voltage operation were analyzed on the assumption that multiplication gain during storage time, which depends on APD bias, followed an empirical formula involving multiplication gain and reverse bias in dc bias condition. In the above breakdown condition, photo-electron conversion characteristics were led by employing the idea of carrier feedback. Experimental results are reproduced well by their analytical models. © 1990 IEEE

引用

页码：1861 / 1868

页数：8

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