TEMPERATURE-DEPENDENCE OF THE EXCITON LIFETIME IN HIGH-PURITY SILICON

被引：59

作者：

HAMMOND, RB ^{[1
]}

SILVER, RN ^{[1
]}

机构：

[1] UNIV CALIF LOS ALAMOS SCI LAB,DIV THEORET,LOS ALAMOS,NM 87545

来源：

关键词：

D O I：

10.1063/1.91277

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：68 / 71

页数：4

共 19 条

[1] INFRARED ABSORPTION BY EXCITONS AND THEIR ASSOCIATES IN SILICON
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YAROSHET.ID
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 46 (02): : 495 - &
[2] ASHKINADZE BM, 1970, SOV PHYS JETP-USSR, V31, P271
[3] RECOMBINATION KINETICS OF EXCITONIC MOLECULES AND FREE EXCITONS IN INTRINSIC SILICON
CUTHBERT, JD
[J]. PHYSICAL REVIEW B, 1970, 1 (04): : 1552 - &
[4] ABSORPTION DUE TO BOUND EXCITONS IN SILICON
DEAN, PJ
FLOOD, WF
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[J]. PHYSICAL REVIEW, 1967, 163 (03): : 721 - &
[5] Dite A. F., 1977, SOV PHYS JETP, V45, P604
[6] KINETICS OF RECOMBINATION RADIATION AND TEMPERATURE OF ELECTRON-HOLE PLASMA IN SILICON
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LYSENKO, VG
TIMOFEEV, VB
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 66 (01): : 53 - 62
[7] CAPTURE CROSS-SECTION OF EXCITONS ON NEUTRAL INDIUM IMPURITIES IN SILICON
ELLIOTT, KR
SMITH, DL
MCGILL, TC
[J]. SOLID STATE COMMUNICATIONS, 1977, 24 (07) : 461 - 463
[8] ANALYSIS OF LO AND TO PHONON ASSISTED FREE EXCITON LUMINESCENCE IN SILICON
HAMMOND, RB
SILVER, RN
[J]. SOLID STATE COMMUNICATIONS, 1978, 28 (12) : 993 - 996
[9] ONSETS OF THE ELECTRON-HOLE-DROPLET LUMINESCENCE IN SI
HAMMOND, RB
SILVER, RN
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (08) : 523 - 526
[10] HENSEL JC, SOLID STATE PHYS, V32, P180