SELECTIVE GROWTH OF GAAS WIRE STRUCTURES BY ELECTRON-BEAM INDUCED METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：18

作者：

TAKAHASHI, T ^{[1
]}

ARAKAWA, Y ^{[1
]}

NISHIOKA, M ^{[1
]}

IKOMA, T ^{[1
]}

机构：

[1] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 01期

关键词：

D O I：

10.1063/1.107376

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We succeeded in the fabrication of GaAs wires by an electron beam induced selective growth technique, for the first time. In situ irradiation of the electron beam, with simultaneous supply of tri-methyl-gallium (TMG) and cracked AsH3, formed a GaAs quasiquantum wire structure as narrow as 300 nm selectively. Auger analysis and dependence of the growth on source materials and types of substrate suggest that the selective growth results from the decomposition of TMG by the electron beam irradiation.

引用

页码：68 / 70

页数：3

共 6 条

[1] LASER ENHANCED METALORGANIC CHEMICAL VAPOR-DEPOSITION CRYSTAL-GROWTH IN GAAS [J].