CHEMICAL EFFECTS IN COLD-WALL LPCVD OF TUNGSTEN

[1] AHN KY, 1988, P WORKSHOP TUNGSTEN, V3, P25

[2] AITCHISON KA, 1985, P WORKSHOP TUNGSTEN, V1, P225

[3] CREIGHTON JR, 1987, WORKSHOP TUNGSTEN OT, V2, P43

[4] ELLWANGER RC, 1989, P WORKSHOP TUNGSTEN, V4, P93

[5] GREEN ML, 1987, TUNGSTEN OTHER REFRA, V2, P85

[6] JOSHI RV, 1988, P WORKSHOP TUNGSTEN, V3, P39

[7] TRACY ME, 1985, P WORKSHOP TUNGSTEN, V1, P211

[8] VANOMMEN AH, 1988, MATER RES SOC S P, V107, P43

[9] INSITU INVESTIGATION OF TIN FORMATION ON TOP OF TISI2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 53 - 61

[10] MECHANISM FOR CHEMICAL-VAPOR DEPOSITION OF TUNGSTEN ON SILICON FROM TUNGSTEN HEXAFLUORIDE [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (11) : 5213 - 5219

[1] AHN KY, 1988, P WORKSHOP TUNGSTEN, V3, P25

[2] AITCHISON KA, 1985, P WORKSHOP TUNGSTEN, V1, P225

[3] CREIGHTON JR, 1987, WORKSHOP TUNGSTEN OT, V2, P43

[4] ELLWANGER RC, 1989, P WORKSHOP TUNGSTEN, V4, P93

[5] GREEN ML, 1987, TUNGSTEN OTHER REFRA, V2, P85

[6] JOSHI RV, 1988, P WORKSHOP TUNGSTEN, V3, P39

[7] TRACY ME, 1985, P WORKSHOP TUNGSTEN, V1, P211

[8] VANOMMEN AH, 1988, MATER RES SOC S P, V107, P43

[9] INSITU INVESTIGATION OF TIN FORMATION ON TOP OF TISI2 [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (01): : 53 - 61

[10] MECHANISM FOR CHEMICAL-VAPOR DEPOSITION OF TUNGSTEN ON SILICON FROM TUNGSTEN HEXAFLUORIDE [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (11) : 5213 - 5219