MECHANISM FOR CHEMICAL-VAPOR DEPOSITION OF TUNGSTEN ON SILICON FROM TUNGSTEN HEXAFLUORIDE

被引：40

作者：

YARMOFF, JA ^{[1
]}

MCFEELY, FR ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 11期

关键词：

D O I：

10.1063/1.340382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5213 / 5219

页数：7

共 14 条

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[9]

MCFEELY FR, UNPUB

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