IMPROVED NOISE MODEL FOR MESFETS AND HEMTS IN LOWER GIGAHERTZ FREQUENCY-RANGE

被引：8

作者：

HEYMANN, P

PRINZLER, H

机构：

[1] Ferdinand Braun Institut f. Höchstfrequenztechnik

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 07期

关键词：

FIELD-EFFECT TRANSISTORS; MODELING; NOISE;

D O I：

10.1049/el:19920385

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A noise model based on an equivalent circuit is applied to an HEMT. Besides the frequency dependence of the most important noise parameters (F(min), R(opt), X(opt), R(N)) two apparent experimental facts are explained: the limited R(opt), X(opt) and the increase of R(N) with decreasing frequency.

引用

收藏

页码：611 / 612

页数：2

相关论文

共 9 条

[1] NOISE MODELING AND MEASUREMENT TECHNIQUES [J].

CAPPY, A .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (01) :1-10

[2] MICROWAVE NOISE CHARACTERIZATION OF GAAS-MESFETS - EVALUATION BY ON-WAFER LOW-FREQUENCY OUTPUT NOISE CURRENT MEASUREMENT [J].

GUPTA, MS ;

PITZALIS, O ;

ROSENBAUM, SE ;

GREILING, PT .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1987, 35 (12) :1208-1218

[3]

HEYMANN P, 1989, FREQUENZ, V43, P112, DOI 10.1515/FREQ.1989.43.4.112

[4]

PITZALIS J, 1990, MICROWAVES RF, P91

[5] MODELING OF NOISE PARAMETERS OF MESFET AND MODFET AND THEIR FREQUENCY AND TEMPERATURE-DEPENDENCE [J].

POSPIESZALSKI, MW .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (09) :1340-1350

[6]

PRINZLER H, IN PRESS FREQUENZ

[7]

Pucel RA, 1975, ADV ELECTRONICS ELEC, V38, P195, DOI DOI 10.1016/S0065-2539(08)61205-6

[8] DETERMINING INTRINSIC NOISE PARAMETERS OF 0.25-MU-M GATE PSEUDOMORPHIC HEMT [J].

TAYLOR, RI ;

BROOKBANKS, DM ;

HOLDEN, AJ .

ELECTRONICS LETTERS, 1991, 27 (21) :1923-1924

[9]

1991, FUJITSU FHX15FHX16 D