HYDROGEN NEUTRALIZATION OF CHALCOGEN DOUBLE DONORS IN SILICON

被引：26

作者：

PENSL, G

ROOS, G

HOLM, C

SIRTL, E

JOHNSON, NM

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

[2] HELIOTRON GMBH,D-8263 BURGHAUSEN,FED REP GER

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 06期

关键词：

D O I：

10.1063/1.98419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：451 / 453

页数：3

共 11 条

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[2]

HOLZLEIN K, 1986, APPL PHYS LETT, V48, P916, DOI 10.1063/1.96657

[3]

HOLZLEIN K, 1986, REV SCI INSTRUM, V57, P1373, DOI 10.1063/1.1138603

[4] INTERSTITIAL HYDROGEN AND NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

JOHNSON, NM ;

HERRING, C ;

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1986, 56 (07) :769-772

[5]

JOHNSON NM, 1987, PHYS REV B, V35, P4166, DOI 10.1103/PhysRevB.35.4166

[6] HYDROGEN PASSIVATION OF THE OXYGEN-RELATED THERMAL-DONOR DEFECT IN SILICON [J].

JOHNSON, NM ;

HAHN, SK .

APPLIED PHYSICS LETTERS, 1986, 48 (11) :709-711

[7] ABSENCE OF OXYGEN DIFFUSION DURING HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

JOHNSON, NM ;

MOYER, MD .

APPLIED PHYSICS LETTERS, 1985, 46 (08) :787-789

[8] DONOR COMPLEX WITH TUNNELING HYDROGEN IN PURE GERMANIUM [J].

JOOS, B ;

HALLER, EE ;

FALICOV, LM .

PHYSICAL REVIEW B, 1980, 22 (02) :832-840

[9]

PENSL G, 1986, 14TH P INT C DEF SEM, V10, P911

[10]

ROOS G, UNPUB

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