HYDROGEN PASSIVATION OF THE OXYGEN-RELATED THERMAL-DONOR DEFECT IN SILICON

被引：52

作者：

JOHNSON, NM ^{[1
]}

HAHN, SK ^{[1
]}

机构：

[1] SILTEC CORP,MT VIEW,CA 94043

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 11期

关键词：

D O I：

10.1063/1.96697

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：709 / 711

页数：3

共 18 条

[1] HYDROGEN-ACCEPTOR PAIRS IN SILICON - PAIRING EFFECT ON THE HYDROGEN VIBRATIONAL FREQUENCY
DELEO, GG
FOWLER, WB
[J]. PHYSICAL REVIEW B, 1985, 31 (10): : 6861 - 6864
[2] BULK ACCEPTOR COMPENSATION PRODUCED IN PARA-TYPE SILICON AT NEAR-AMBIENT TEMPERATURES BY A H2O PLASMA
HANSEN, WL
PEARTON, SJ
HALLER, EE
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (06) : 606 - 608
[3] 3-DIMENSIONAL POOLE-FRENKEL EFFECT
HARTKE, JL
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (10) : 4871 - &
[4] SYMMETRY AND ELECTRONIC-PROPERTIES OF THE OXYGEN THERMAL DONOR IN PULLED SILICON
HENRY, PM
FARMER, JW
MEESE, JM
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 454 - 456
[5] JOHNSON NM, 1981, J VAC SCI TECHNOL, V19, P390, DOI 10.1116/1.571070
[6] DEUTERIUM PASSIVATION OF GRAIN-BOUNDARY DANGLING BONDS IN SILICON THIN-FILMS
JOHNSON, NM
BIEGELSEN, DK
MOYER, MD
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 882 - 884
[7] IDENTIFICATION OF DEEP-GAP STATES IN ALPHA-SI-H BY PHOTODEPOPULATION-INDUCED ELECTRON-SPIN RESONANCE
JOHNSON, NM
BIEGELSEN, DK
[J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4066 - 4069
[8] INTERSTITIAL HYDROGEN AND NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON
JOHNSON, NM
HERRING, C
CHADI, DJ
[J]. PHYSICAL REVIEW LETTERS, 1986, 56 (07) : 769 - 772
[9] ABSENCE OF OXYGEN DIFFUSION DURING HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON
JOHNSON, NM
MOYER, MD
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (08) : 787 - 789
[10] MECHANISM FOR HYDROGEN COMPENSATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON
JOHNSON, NM
[J]. PHYSICAL REVIEW B, 1985, 31 (08): : 5525 - 5528

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