V-DH LASER - A LASER WITH A V-SHAPED ACTIVE REGION GROWN BY METALORGANIC CVD

被引：5

作者：

MORI, Y

MATSUDA, O

MORIZANE, K

WATANABE, N

机构：

来源：

ELECTRONICS LETTERS | 1980年 / 16卷 / 20期

关键词：

D O I：

10.1049/el:19800558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：785 / 787

页数：3

相关论文

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[1] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[2] SINGLE-LONGITUDINAL-MODE CW ROOM-TEMPERATURE GA1-XALXAS-GAAS CHANNEL-GUIDE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[3] CW OPERATION OF ALXGA1-XAS-ALYGA1-YAS LASERS GROWN BY METALORGANIC CVD IN WAVELENGTH RANGE 760 APPROXIMATELY 780 NM [J].

MORI, Y ;

WATANABE, N .

ELECTRONICS LETTERS, 1980, 16 (08) :284-285

[4] METALORGANIC CVD GROWTH OF GAAS-GAAIAS DOUBLE HETEROJUNCTION LASERS HAVING LOW INTERFACIAL RECOMBINATION AND LOW THRESHOLD CURRENT [J].

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SELWAY, PR ;

HENSHALL, GD .

ELECTRONICS LETTERS, 1979, 15 (05) :156-158

[5] GROWTH AND CHARACTERIZATION OF MO-VPE DOUBLE-HETEROJUNCTION LASERS [J].

VEENVLIET, H ;

VANOPDORP, C ;

TIJBURG, RP ;

ANDRE, JP .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :762-766