ULTRA-LOW-THRESHOLD, HIGH-BANDWIDTH, VERY-LOW-NOISE OPERATION OF 1.52 MU-M GAINASP-INP DFB BURIED RIDGE STRUCTURE LASER-DIODES ENTIRELY GROWN BY MOCVD

被引：13

作者：

KRAKOWSKI, M

RONDI, D

TALNEAU, A

COMBEMALE, Y

CHEVALIER, G

DEBORGIES, F

MAILLOT, P

RICHIN, P

BLONDEAU, R

DAURIA, L

DEGREMOUX, B

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 06期

关键词：

D O I：

10.1109/3.29267

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1346 / 1352

页数：7

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