SUPPRESSION OF BANDGAP SHIFTS IN GAAS/ALGAAS QUANTUM-WELLS USING STRONTIUM FLUORIDE CAPS

被引：38

作者：

BEAUVAIS, J ^{[1
]}

MARSH, JH ^{[1
]}

KEAN, AH ^{[1
]}

BRYCE, AC ^{[1
]}

BUTTON, C ^{[1
]}

机构：

[1] UNIV SHEFFIELD,FAC SERC III-V SEMICONDUCTOR,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 17期

关键词：

ANNEALING; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS;

D O I：

10.1049/el:19921062

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum well intermixing using dielectric caps has been studied using photoluminescence at 77 K. The structures which have been investigated, including shallow depth single quantum wells and multiquantum well waveguiding material, are highly sensitive to the presence of surface defects during annealing. Samples capped with either silicon nitride or silica have shown considerable energy shifts after processing in a rapid thermal annealer, and large energy shifts have also been found in uncapped material. Samples capped with strontium fluoride have shown negligible intermixing of the quantum wells.

引用

页码：1670 / 1672

页数：3

共 9 条

[1] STRIPE-GEOMETRY QUANTUM-WELL HETEROSTRUCTURE ALXGA1-XAS-GAAS LASERS DEFINED BY DEFECT DIFFUSION [J].