SI DIFFUSION IN COMPOSITIONAL DISORDERING OF SI-IMPLANTED GAAS/ALGAAS SUPERLATTICES INDUCED BY RAPID THERMAL ANNEALING

被引：3

作者：

UEMATSU, M

YANAGAWA, F

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 09期

关键词：

D O I：

10.1143/JJAP.27.L1734

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1734 / L1735

页数：2

共 12 条

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[5] DISORDERING OF SI-DOPED ALAS/GAAS SUPERLATTICE BY ANNEALING [J].

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[6] SIMS STUDY OF COMPOSITIONAL DISORDERING IN SI ION-IMPLANTED ALGAAS-GAAS SUPERLATTICE [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (05) :L385-L387

[7] EFFECT OF RAPID THERMAL ANNEALING FOR THE COMPOSITIONAL DISORDERING OF SI-IMPLANTED ALGAAS/GAAS SUPERLATTICES [J].

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MERZ, JL .

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[8] DEFECT STRUCTURE AND INTERMIXING OF ION-IMPLANTED ALXGA1-XAS/GAAS SUPERLATTICES [J].

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DECOOMAN, BC ;

CARTER, CB .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (01) :120-123

[9]

TATSUTA S, 1985, MATER RES SOC S P, V37, P23

[10] COMPOSITIONAL DISORDERING OF SI-IMPLANTED GAAS ALGAAS SUPERLATTICES BY RAPID THERMAL ANNEALING [J].

UEMATSU, M ;

YANAGAWA, F .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (08) :L1407-L1409

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