PHOTOCONDUCTIVITY IN EPITAXIAL PB1-XSNXTE

被引：10

作者：

LOGOTHETIS, EM

HOLLOWAY, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1972年 / 43卷 / 01期

关键词：

D O I：

10.1063/1.1660828

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：256 / +

页数：1

共 9 条

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[2] HIGH-MOBILITY EPITAXIAL LAYERS OF PBTE AND PB1-XSNXTE PREPARED BY POST-GROWTH ANNEALING [J].

HOLLOWAY, H ;

LOGOTHEI.EM .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4522-&

[3] EPITAXIAL GROWTH OF LEAD TIN TELLURIDE [J].

HOLLOWAY, H ;

LOGOTHETIS, EM ;

WILKES, E .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) :3543-+

[4] PHOTOCONDUCTIVITY IN SINGLE-CRYSTAL PB1-XSNXTE [J].

MELNGAILIS, I ;

HARMAN, TC .

APPLIED PHYSICS LETTERS, 1968, 13 (05) :180-+

[5]

Melngailis I., 1970, SEMICOND SEMIMETALS, V5, P111, DOI [10.1016/S0080-8784(08)62815-X, DOI 10.1016/S0080-8784(08)62815-X]

[6] PHOTOSENSITIVITY IN EPITAXIAL PBS FILMS [J].

RIEDL, HR ;

SCHOOLAR, RB .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) :5086-&

[7] EPITAXIAL LEAD SULFIDE PHOTOVOLTAIC CELLS AND PHOTOCONDUCTIVE FILMS [J].

SCHOOLAR, RB .

APPLIED PHYSICS LETTERS, 1970, 16 (11) :446-&

[8] PREPARATION AND PROPERTIES OF SINGLE-CRYSTAL LEAD TELLURIDE FILMS [J].

SUMNER, GG ;

REYNOLDS, LL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :493-&

[9]

TAO TF, 1969, J VAC SCI TECHNOL, V6, P918

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