THERMAL INTERDIFFUSION IN INGAAS/GAAS STRAINED QUANTUM-WELLS AS A FUNCTION OF DOPING DENSITY

We have studied the thermal stability and interdiffusion of InGaAs/GaAs single quantum wells as a function of temperature for both p-type, Be and n-type, Si doping at various doping concentrations. The interdiffusion of the group III elements is monitored using the photoluminescence from the ground states of the valence and conduction band quantum wells. The intermixing is modelled the using a Green's function method to solve the diffusion equation to describe the evolution of the well shapes during processing; the Schrödinger equation is solved for this well shape, to provide the ground state energy levels of the system using the interdiffusion constant as the only unknown fitting parameter which is therefore uniquely determined. Using this approach we have determined the Ga/In interdiffusion constants for anneal temperatures upto 1050°C for doping levels upto 1018 cm-3. © 1991.