CHARACTERIZATION OF SILICON ION-IMPLANTATION DAMAGE IN SINGLE-STRAINED-LAYER (INGA)AS/GAAS QUANTUM WELLS

被引：6

作者：

MYERS, DR

ARNOLD, GW

FRITZ, IJ

DAWSON, LR

BIEFELD, RM

HILLS, CR

DOYLE, BL

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 05期

关键词：

D O I：

10.1007/BF02652126

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：405 / 409

页数：5

共 13 条

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[9] CHARACTERIZATION OF ION-IMPLANTATION DOPING OF STRAINED-LAYER SUPERLATTICES .1. STRUCTURAL-PROPERTIES [J].

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