DEPLETION-MODE GAAS SISFETS BY SELECTIVE ION-IMPLANTATION

被引：4

作者：

BARATTE, H

SOLOMON, PM

LATULIPE, DC

JACKSON, TN

FRANK, DJ

WRIGHT, SL

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 10期

关键词：

D O I：

10.1109/EDL.1987.26703

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：486 / 488

页数：3

共 8 条

[1]

Baratte H., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P444

[2] N+-GAAS UNDOPED GAALAS UNDOPED GAAS FIELD-EFFECT TRANSISTOR [J].

MATSUMOTO, K ;

OGURA, M ;

WADA, T ;

HASHIZUME, N ;

YAO, T ;

HAYASHI, Y .

ELECTRONICS LETTERS, 1984, 20 (11) :462-463

[3]

MOONEY PM, 1985, UNPUB

[4]

MOORE JS, 1987, IN PRESS ION IMPLANT

[5] A GAAS GATE HETEROJUNCTION FET [J].

SOLOMON, PM ;

KNOEDLER, CM ;

WRIGHT, SL .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) :379-381

[6] PERPENDICULAR TRANSPORT ACROSS (AL,GA) AS AND THE GAMMA-TRANSITION TO X-TRANSITION [J].

SOLOMON, PM ;

WRIGHT, SL ;

LANZA, C .

SUPERLATTICES AND MICROSTRUCTURES, 1986, 2 (06) :521-525

[7] MODULATION-DOPED GAAS/ALGAAS HETEROJUNCTION FIELD-EFFECT TRANSISTORS (MODFETS), ULTRAHIGH-SPEED DEVICE FOR SUPERCOMPUTERS [J].

SOLOMON, PM ;

MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1015-1027

[8] INSITU CONTACTS TO GAAS BASED ON INAS [J].

WRIGHT, SL ;

MARKS, RF ;

TIWARI, S ;

JACKSON, TN ;

BARATTE, H .

APPLIED PHYSICS LETTERS, 1986, 49 (22) :1545-1547

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