INSITU CONTACTS TO GAAS BASED ON INAS

[1] BARATTE H, 1986, UNPUB DEC INT EL DEV

[2] OHMIC CONTACTS TO GAAS [J]. THIN SOLID FILMS, 1983, 104 (3-4) : 391 - 397

[3] ABSENCE OF FERMI LEVEL PINNING AT METAL-INX GA1-XAS (100) INTERFACES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (21) : 1458 - 1460

[4] GLAZOV VM, 1976, SOV PHYS SEMICOND+, V10, P378

[5] LOW-RESISTANCE NONALLOYED OHMIC CONTACTS TO SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (01) : 26 - 28

[6] DETERMINATION OF THE INAS-GAAS(100) HETEROJUNCTION BAND DISCONTINUITIES BY X-RAY PHOTO-ELECTRON SPECTROSCOPY (XPS) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 705 - 708

[7] MILNES AG, 1972, HETEROJUNCTIONS META, P8

[8] N-N SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 121 - 132

[9] RAO MA, UNPUB 1986 IEEE T EL

[10] BARRIER HEIGHT REDUCTION FOR GRADED N-N HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1359 - 1360

[1] BARATTE H, 1986, UNPUB DEC INT EL DEV

[2] OHMIC CONTACTS TO GAAS [J]. THIN SOLID FILMS, 1983, 104 (3-4) : 391 - 397

[3] ABSENCE OF FERMI LEVEL PINNING AT METAL-INX GA1-XAS (100) INTERFACES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (21) : 1458 - 1460

[4] GLAZOV VM, 1976, SOV PHYS SEMICOND+, V10, P378

[5] LOW-RESISTANCE NONALLOYED OHMIC CONTACTS TO SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (01) : 26 - 28

[6] DETERMINATION OF THE INAS-GAAS(100) HETEROJUNCTION BAND DISCONTINUITIES BY X-RAY PHOTO-ELECTRON SPECTROSCOPY (XPS) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 705 - 708

[7] MILNES AG, 1972, HETEROJUNCTIONS META, P8

[8] N-N SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 121 - 132

[9] RAO MA, UNPUB 1986 IEEE T EL

[10] BARRIER HEIGHT REDUCTION FOR GRADED N-N HETEROJUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 1359 - 1360