STRONG ELECTRON-PHONON INTERACTION EFFECTS IN MODULATED TRANSIENT REFLECTANCE SPECTRA OF GA.50IN.50P

被引:2
作者
SUGAI, S [1 ]
HARRIS, JH [1 ]
NURMIKKO, AV [1 ]
机构
[1] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
关键词
D O I
10.1016/0038-1098(82)90928-0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:913 / 916
页数:4
相关论文
共 13 条
[1]  
Alferov Zh. I., 1974, Soviet Physics - Semiconductors, V7, P1534
[2]  
BLOOD P, J APPL PHYS
[3]   PHOTOLUMINESCENCE OF UNDOPED GAXIN1-XP ALLOYS [J].
CHEVALLIER, J ;
LAUGIER, A .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 8 (02) :437-+
[4]  
CHEVALLIER J, 1978, J PHYSIQUE, V39, P647
[5]   INTERFACE RECOMBINATION AND CARRIER CONFINEMENT AT A GAAS/GAXIN1-XP DOUBLE HETEROJUNCTION STUDIED BY PICOSECOND POPULATION MODULATION SPECTROSCOPY [J].
HARRIS, JH ;
SUGAI, S ;
NURMIKKO, AV .
APPLIED PHYSICS LETTERS, 1982, 40 (10) :885-887
[6]   NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].
HENRY, CH ;
LANG, DV .
PHYSICAL REVIEW B, 1977, 15 (02) :989-1016
[7]   LUMINESCENCE FROM IN0.5GA0.5P PREPARED BY VAPOR-PHASE EPITAXY [J].
KRESSEL, H ;
NUESE, CJ ;
LADANY, I .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3266-3272
[8]   LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].
LANG, DV ;
LOGAN, RA .
PHYSICAL REVIEW LETTERS, 1977, 39 (10) :635-639
[9]  
MATSUMOTO T, 1976, JAP J APPL PHYS, V15, P1481
[10]   EXCITON ABSORPTION, PHOTOLUMINESCENCE AND BAND-STRUCTURE OF N-FREE AND N-DOPED IN-1-XGA-XP [J].
NELSON, RJ ;
HOLONYAK, N .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1976, 37 (06) :629-637