ORDERED STRUCTURES AND PHASE STATES IN EPITAXIAL LAYERS OF III-V SEMICONDUCTOR ALLOYS

被引:21
作者
MATSUMURA, S
KUWANO, N
OKI, K
机构
[1] Department of Materials Science and Technology, Graduate School of Engineering Sciences, Kyushu University, Fukuoka, 816, 39, Kasuga-shi
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 04期
关键词
111-V semiconductor alloys; Epitaxial growth; Ground-state analysis; Ising model; Long-range order; Pairwise interactions; Phase separation; Phase stability;
D O I
10.1143/JJAP.29.688
中图分类号
O59 [应用物理学];
学科分类号
摘要
The conditions for atomic long-range ordering and probable phase states in (001) and (110) epilayers of III–V semiconductor alloys of the A0.5B0.5C type have been discussed in terms of a simple phenomenological Ising model taking into account the layer-by-layer stacking sequence of epitaxial growth. The results clearly explain some specific features of the epitaxial phase formation which have been revealed by experiments. It is suggested that the epitaxial growth can develop atomic long-range order even in alloys which have a tendency toward phase separation in the bulk state. © 1990 The Japan Society of Applied Physics.
引用
收藏
页码:688 / 695
页数:8
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