CHARGE STORAGE PHENOMENA IN AL-GAMMA-AL2O3-SIO2-SI STRUCTURES

被引：15

作者：

CHOU, NJ

TSANG, PJ

机构：

来源：

METALLURGICAL TRANSACTIONS | 1971年 / 2卷 / 03期

关键词：

D O I：

10.1007/BF02662718

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

引用

页码：659 / &

共 15 条

[1]

ARAKAWA ET, 1969, J PHYS CHEM SOLIDS, V29, P735

[2] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES [J].

CHU, TL ;

SZEDON, JR ;

LEE, CH .

SOLID-STATE ELECTRONICS, 1967, 10 (09) :897-&

[3]

DOO VY, 1969, MAY M EL SOC NEW YOR

[4]

FILARETOV GA, 1968, SOV PHYS SEMICOND+, V1, P1242

[5] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].

FROHMANB.D ;

LENZLINGER, M .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3307-+

[6]

GOETZBERGER A, 1966, APPL PHYS LETT, V9, P444

[7]

KESHAVAN BV, 1968, MONOS MEMORY ELEMENT

[8]

MITCHELL JP, 1968, IEEE T NUCL SCI, V154, pNS15

[9] AVALANCHE INJECTION CURRENTS AND CHARGING PHENOMENA IN THERMAL SIO2 [J].

NICOLLIAN, EH ;

GOETZBERGER, A ;

BERGLUND, CN .

APPLIED PHYSICS LETTERS, 1969, 15 (06) :174-+

[10] ELECTRON TUNNELING THROUGH ASYMMETRIC FILMS OF THERMALLY GROWN AL2O3 [J].

POLLACK, SR ;

MORRIS, CE .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (05) :1503-&

← 1 2 →