SILICON ATOMIC LAYER GROWTH CONTROLLED BY FLASH HEATING IN CHEMICAL-VAPOR DEPOSITION USING SIH4 GAS

被引：44

作者：

MUROTA, J

SAKURABA, M

ONO, S

机构：

[1] Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University, Aoba-Ku, Sendai 980

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 19期

关键词：

D O I：

10.1063/1.109416

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The separation between surface adsorption and reaction of SiH4 on a Si substrate has been investigated by heating the surface with a Xe flash lamp in an ultraclean low-pressure environment. About 0.4 atomic-layer epitaxy per flash-lamp light shot was observed on Si(100) at a substrate temperature of 385-degrees-C and at SiH4 Partial pressure of 500 Pa. The dependencies of SiH4 surface coverage on the SiH4 partial pressure and shot-to-shot time interval are expressed by the Langmuir adsorption type equation, assuming that the total adsorption site density is equal to the surface atom density.

引用

页码：2353 / 2355

页数：3

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