PHYSICAL MODEL OF THRESHOLD VOLTAGE IN SILICON MOS-TRANSISTORS INCLUDING REVERSE SHORT-CHANNEL EFFECT

被引：12

作者：

BRUT, H ^{[1
]}

JUGE, A ^{[1
]}

GHIBAUDO, G ^{[1
]}

机构：

[1] INST NATL POLYTECH GRENOBLE,ENSERG,PHYS COMPOSANTS SEMICOND LAB,CNRS,URA,F-38016 GRENOBLE,FRANCE

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 05期

关键词：

MOSFETS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR PHYSICS;

D O I：

10.1049/el:19950233

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A physically based model for the MOSFET threshold voltage accounting for the reverse short channel effect is proposed. This threshold voltage model, which incorporates the inhomogeneous transverse and longitudinal doping profiles as well as the conventional charge sharing short channel effect. has been successfully tested on several submicronic technologies with various channel lengths.

引用

页码：411 / 412

页数：2

共 12 条

[1]

BALLAY N, EUR C ABSTR F, V8, P56

[2] A MODEL FOR ANOMALOUS SHORT-CHANNEL BEHAVIOR IN SUBMICRON MOSFETS [J].

HANAFI, HI ;

NOBLE, WP ;

BASS, RS ;

VARAHRAMYAN, K ;

LII, Y ;

DALLY, AJ .

IEEE ELECTRON DEVICE LETTERS, 1993, 14 (12) :575-577

[3]

HUANG JH, 1993, P IEEE CUSTOM INTEGR

[4]

Jacobs H., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P307, DOI 10.1109/IEDM.1993.347346

[5]

KALNITSKY A, 1994, P ESSDERC 94, P377

[6] REVERSE SHORT-CHANNEL EFFECT DUE TO LATERAL DIFFUSION OF POINT-DEFECT INDUCED BY SOURCE DRAIN ION-IMPLANTATION [J].

KUNIKIYO, T ;

MITSUI, K ;

FUJINAGA, M ;

UCHIDA, T ;

KOTANI, N .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1994, 13 (04) :507-514

[7] REVERSE SHORT-CHANNEL EFFECTS ON THRESHOLD VOLTAGE IN SUBMICROMETER SALICIDE DEVICES [J].

LU, CY ;

SUNG, JM .

IEEE ELECTRON DEVICE LETTERS, 1989, 10 (10) :446-448

[8] AN ANOMALOUS INCREASE OF THRESHOLD VOLTAGES WITH SHORTENING THE CHANNEL LENGTHS FOR DEEPLY BORON-IMPLANTED N-CHANNEL MOSFETS [J].

NISHIDA, M ;

ONODERA, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) :1101-1103

[9]

ORLOWSKI M, 1987, IEDM TECH DIG, P632

[10]

Rafferty C. S., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P311, DOI 10.1109/IEDM.1993.347345

← 1 2 →