PASSIVATION OF SHALLOW ACCEPTORS BY H IN SI - A MICROSCOPIC STUDY BY PERTURBED ANGULAR-CORRELATIONS

被引：61

作者：

WICHERT, T

SKUDLIK, H

DEICHER, M

GRUBEL, G

KELLER, R

RECKNAGEL, E

SONG, L

机构：

来源：

PHYSICAL REVIEW LETTERS | 1987年 / 59卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.59.2087

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2087 / 2090

页数：4

共 21 条

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[6]

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[8] INDIUM-VACANCY INTERACTION IN LASER-ANNEALED SILICON [J].

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[9] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN [J].

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MAGEE, CW ;

LUCOVSKY, G .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :421-423

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