AL/W/TINX/TISIY/SI BARRIER TECHNOLOGY FOR 1.0-MU-M CONTACTS

被引：6

作者：

SUN, SW ^{[1
]}

LEE, JJ ^{[1
]}

BOECK, B ^{[1
]}

HANCE, RL ^{[1
]}

机构：

[1] MOTOROLA INC,RELIABIL & QUAL ASSURANCE LAB,AUSTIN,TX 78721

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 02期

关键词：

D O I：

10.1109/55.2044

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：71 / 73

页数：3

共 13 条

[1]

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[2] TITANIUM-TUNGSTEN CONTACTS TO SI - THE EFFECTS OF ALLOYING ON SCHOTTKY CONTACT AND ON SILICIDE FORMATION [J].

BABCOCK, SE ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6898-6905

[3] SELECTIVE LPCVD TUNGSTEN FOR CONTACT BARRIER APPLICATIONS [J].

LEVY, RA ;

GREEN, ML ;

GALLAGHER, PK ;

ALI, YS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (09) :1905-1912

[4] IMPURITY EFFECTS IN TRANSITION-METAL SILICIDES [J].

LIEN, CD ;

NICOLET, MA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (04) :738-747

[5] REACTION-KINETICS OF TUNGSTEN THIN-FILMS ON SILICON (100) SURFACES [J].

LOCKER, LD ;

CAPIO, CD .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4366-4369

[6]

MILLER NE, 1982, SOLID STATE TECHNOL, V25, P85

[7]

NICOLET MA, 1987, TUNGSTEN OTHER REFRA, V2, P19

[8]

OKAMOTO T, 1986 S VLSI TECHN, P51

[9]

PARRILLO LC, 1986 IEDM, P244

[10]

SO FCT, 1987, TUNGSTEN OTHER REFRA, V2, P301

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