DISPLACEMENT AND RECOIL IN ION-IMPLANTED SILICON

被引：9

作者：

MEDA, L ^{[1
]}

CEROFOLINI, GF ^{[1
]}

OTTAVIANI, G ^{[1
]}

机构：

[1] UNIV MODENA, DEPT PHYS, I-41100 MODENA, ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80089-7

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：454 / 456

页数：3

共 9 条

[1] DISORDER PRODUCED BY HIGH-DOSE IMPLANTATION IN SI [J].

CSEPREGI, L ;

KENNEDY, EF ;

LAU, SS ;

MAYER, JW ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1976, 29 (10) :645-648

[2] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :92-93

[3] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J].

DONOVAN, EP ;

SPAEPEN, F ;

TURNBULL, D ;

POATE, JM ;

JACOBSON, DC .

APPLIED PHYSICS LETTERS, 1983, 42 (08) :698-700

[4]

Gibbons J.F., 1975, PROJECTED RANGE STAT, V2nd

[5]

Mazzone A. M., 1985, Radiation Effects Letters Section, V87, P91, DOI 10.1080/01422448508205239

[6] 3-DIMENSIONAL MONTE-CARLO SIMULATIONS .2. RECOIL PHENOMENA [J].

MAZZONE, AM .

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 1985, 4 (01) :110-117

[7] COMPUTER-SIMULATION OF ATOMIC-DISPLACEMENT CASCADES IN SOLIDS IN BINARY-COLLISION APPROXIMATION [J].

ROBINSON, MT ;

TORRENS, IM .

PHYSICAL REVIEW B, 1974, 9 (12) :5008-5024

[8] ENERGY DENSITY AND TIME CONSTANT OF HEAVY-ION INDUCED ELASTIC-COLLISION SPIKES IN SOLIDS [J].

SIGMUND, P .

APPLIED PHYSICS LETTERS, 1974, 25 (03) :169-171

[9]

WILLIAMS JS, 1985, MATER RES SOC S P, V35, P127

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