PHOTOELASTIC EFFECTS ON THE EMISSION PATTERNS OF INGAASP RIDGE-WAVEGUIDE LASERS

被引：20

作者：

MACIEJKO, R ^{[1
]}

GLINSKI, JM ^{[1
]}

CHAMPAGNE, A ^{[1
]}

BERGER, J ^{[1
]}

SAMSON, L ^{[1
]}

机构：

[1] HITACHI LTD, CENT RES LAB, KOKUBUNJI, TOKYO 185, JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 04期

基金：

加拿大自然科学与工程研究理事会;

关键词：

Lasers; Semiconductor - Photoelasticity - Semiconducting Indium Compounds;

D O I：

10.1109/3.17327

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dielectric window opening in ridge waveguide lasers needed for the ohmic contact is shown to be able to cause appreciable stress deformations of the effective permittivity which defines the waveguide properties of the laser. For edge force values in the range of 40 dyn/μm, the emission properties of the laser, namely the near field and the threshold current, start to change. The results indicate that for still higher values, filamentation begins to occur. The numerical results presented use a global self-consistent model of the semiconductor laser and finite-element method for stress-field calculations.

引用

页码：651 / 661

页数：11

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