LIFETIMES AND DIODE CHARACTERISTICS IN EPITAXIAL SILICON

[1] BALK P, 1965, MAY EL SOC M SAN FRA

[2] ELECTRON IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND OXYGEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) : 739 - &

[3] CONTAMINANTS ON CHEMICALLY ETCHED SILICON SURFACES - LEED-AUGER METHOD [J]. SURFACE SCIENCE, 1970, 23 (02) : 283 - &

[4] X-RAY MEASUREMENT OF ELASTIC STRAIN AND LATTICE CONSTANT OF DIFFUSED SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (01) : 33 - &

[5] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824

[6] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +

[7] GETTERING OF METALLIC IMPURITIES FROM PLANAR SILICON DIODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 533 - 537

[8] KAO YC, 1970, MAY EL SOC M LOS ANG

[9] KERN W, 1970, RCA REV, V31, P187

[10] MANN JE, 1964, PHYS FAIL ELECTRON, V2, P145

[1] BALK P, 1965, MAY EL SOC M SAN FRA

[2] ELECTRON IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND OXYGEN [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) : 739 - &

[3] CONTAMINANTS ON CHEMICALLY ETCHED SILICON SURFACES - LEED-AUGER METHOD [J]. SURFACE SCIENCE, 1970, 23 (02) : 283 - &

[4] X-RAY MEASUREMENT OF ELASTIC STRAIN AND LATTICE CONSTANT OF DIFFUSED SILICON [J]. SOLID-STATE ELECTRONICS, 1967, 10 (01) : 33 - &

[5] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824

[6] ON DETERMINATION OF MINORITY CARRIER LIFETIME FROM TRANSIENT RESPONSE OF AN MOS CAPACITOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) : 781 - +

[7] GETTERING OF METALLIC IMPURITIES FROM PLANAR SILICON DIODES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) : 533 - 537

[8] KAO YC, 1970, MAY EL SOC M LOS ANG

[9] KERN W, 1970, RCA REV, V31, P187

[10] MANN JE, 1964, PHYS FAIL ELECTRON, V2, P145