DETERMINATION OF BOND ENERGY OF SILICA GLASS BY MEANS OF ION SPUTTERING INVESTIGATIONS

[1] AKISHIN AI, 1962, NACHR AKAD WISS UD P, V26, P1379

[2] TEMPERATURE DEPENDENCE OF EJECTION PATTERNS IN GE, SI, INSB, AND INAS SPUTTERING [J]. SURFACE SCIENCE, 1964, 2 : 367 - 375

[3] Bach H., 1970, Journal of Non-Crystalline Solids, V3, P1, DOI 10.1016/0022-3093(70)90102-X

[4] BACH H, 1970, Z ANGEW PHYSIK, V28, P239

[5] MEASUREMENT OF EROSION RATES IN NON-CONDUCTORS AND DETERMINATION OF BOND ENTHALPHY IN SILICONE GLASS [J]. NATURWISSENSCHAFTEN, 1968, 55 (09) : 439 - &

[6] BACH H, 1969, THESIS MAINZ

[7] ZUR TEMPERATURABHANGIGKEIT DER STRAHLENSATTIGUNG IN SIC [J]. PHYSICA STATUS SOLIDI, 1965, 11 (01): : K67 - &

[8] BEHRISCH R, 1964, ERGEB EXAKT NATURW, V35

[9] BERMAN R, 1953, PHIL MAG S, V2, P103

[10] UNIFIED SPUTTERING THEORY [J]. NUCLEAR INSTRUMENTS & METHODS, 1967, 47 (02): : 201 - &

[1] AKISHIN AI, 1962, NACHR AKAD WISS UD P, V26, P1379

[2] TEMPERATURE DEPENDENCE OF EJECTION PATTERNS IN GE, SI, INSB, AND INAS SPUTTERING [J]. SURFACE SCIENCE, 1964, 2 : 367 - 375

[3] Bach H., 1970, Journal of Non-Crystalline Solids, V3, P1, DOI 10.1016/0022-3093(70)90102-X

[4] BACH H, 1970, Z ANGEW PHYSIK, V28, P239

[5] MEASUREMENT OF EROSION RATES IN NON-CONDUCTORS AND DETERMINATION OF BOND ENTHALPHY IN SILICONE GLASS [J]. NATURWISSENSCHAFTEN, 1968, 55 (09) : 439 - &

[6] BACH H, 1969, THESIS MAINZ

[7] ZUR TEMPERATURABHANGIGKEIT DER STRAHLENSATTIGUNG IN SIC [J]. PHYSICA STATUS SOLIDI, 1965, 11 (01): : K67 - &

[8] BEHRISCH R, 1964, ERGEB EXAKT NATURW, V35

[9] BERMAN R, 1953, PHIL MAG S, V2, P103

[10] UNIFIED SPUTTERING THEORY [J]. NUCLEAR INSTRUMENTS & METHODS, 1967, 47 (02): : 201 - &