OPTICAL CHARACTERIZATION OF THE INTERFACE IN GAAS/ALAS QUANTUM-WELLS

被引：5

作者：

DEVEAUD, B

CHOMETTE, A

ROY, N

SERMAGE, B

KATZER, DS

机构：

[1] CTR NATL ETUD TELECOMMUN,F-92120 BAGNEUX,FRANCE

[2] USN,RES LAB,WASHINGTON,DC 20375

来源：

SURFACE SCIENCE | 1992年 / 267卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)91120-Z

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Luminescence, luminescence excitation as well as time resolved luminescence under resonant excitation are performed on high quality GaAs/AlAs quantum wells in order to assess the quality of the interface. The transfer from zones of a well defined thickness to zones larger by one monolayer is evidenced by selective excitation.

引用

收藏

页码：199 / 203

页数：5

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