NONLINEAR GAMMA-RAY ACTIVATION OF DEFECT SPINS IN VITREOUS SILICA

被引:11
作者
GALEENER, FL
机构
[1] Department of Physics, Colorado State University, Fort Collins
关键词
D O I
10.1016/0022-3093(92)90051-K
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Previously published data showing electron spin resonance spin count versus ionizing radiation dose in bulk vitreous SiO2 are compared for the two cases of approximately 1.25 MeV gamma-rays and approximately 8 keV X-rays. For both Suprasil 1 and Suprasil W1 materials, the non-linear production of paramagnetic states with increasing dose for gamma-rays at doses below approximately 175 Mrad is shown to have nearly identical forms to those for X-rays at doses below approximately 8 Mrad. It is then argued that the non-linearity of the gamma-ray data has the same physical origin as previously ascribed to the non-linearity of the X-ray data: an exponentially saturating 'activation' of pre-existing defects, accompanied by a linearly increasing number of newly created defects. The data for E' and non-bridging oxygen hole center defects show that approximately 1.25 MeV gamma-rays are at least an order of magnitude more efficient per unit of dose for activating pre-existing defects than are approximately 8 keV X-rays.
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页码:27 / 31
页数:5
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