ELECTRON-SPIN-RESONANCE STUDY OF RADIATION-INDUCED PARAMAGNETIC DEFECTS IN OXIDES GROWN ON (100) SILICON SUBSTRATES

被引：134

作者：

KIM, YY ^{[1
]}

LENAHAN, PM ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT ENGN SCI & MECH,UNIVERSITY PK,PA 16802

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 07期

关键词：

D O I：

10.1063/1.341494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3551 / 3557

页数：7

共 49 条

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[7] XPS STUDIES OF STRUCTURE-INDUCED RADIATION EFFECTS AT THE SI-SIO2 INTERFACE
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[9] RELATIONSHIP BETWEEN TRAPPED HOLES AND INTERFACE STATES IN MOS CAPACITORS
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[J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 590 - 591
[10] Hughes HL., 1964, ELECTRONICS, V37, P58

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