Novel high-yield trilayer resist process for 0.1 mu m T-gate fabrication

被引:51
作者
Wakita, AS
Su, CY
Rohdin, H
Liu, HY
Lee, A
Seeger, J
Robbins, VM
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 06期
关键词
D O I
10.1116/1.588253
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
By utilizing a novel ZEP/PMGI/ZEP trilayer resist process, GaInAs/AlInAs T-gate modulation-doped field effect transistors on InP with 0.1 mu m gate lengths have been demonstrated. The trilayer resist requires only a single exposure. An overhang structure for liftoff, with a 0.1 mu m footprint, is created by a sequence of infinitely selective developments for each layer. Linewidths as narrow as 65 nm have been obtained. Devices with a maximum current of 860 mA/mm, extrinsic transconductances of 658 mS/mm, and a current-gain-cutoff frequency f(t) of as high as 203 GHz have been fabricated. Yields as high as 96% and a threshold voltage uniformity of 34 mV (1 sigma) have been achieved on a 2 in, wafer. (C) 1995 American Vacuum Society.
引用
收藏
页码:2725 / 2728
页数:4
相关论文
共 11 条
[1]   REDUCTION AND ELIMINATION OF PROXIMITY EFFECTS [J].
DOBISZ, EA ;
MARRIAN, CRK ;
SALVINO, RE ;
ANCONA, MA ;
PERKINS, FK ;
TURNER, NH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (06) :2733-2740
[2]  
GREENEICH JS, 1980, ELECTRON BEAM TECHNO, P69
[3]  
Liu H., UNPUB
[4]  
Mishra U. K., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P180, DOI 10.1109/IEDM.1988.32784
[5]   MICROWAVE PERFORMANCE OF A1INAS-GAINAS HEMTS WITH 0.2-MU-M AND 0.1-MU-M GATE LENGTH [J].
MISHRA, UK ;
BROWN, AS ;
ROSENBAUM, SE ;
HOOPER, CE ;
PIERCE, MW ;
DELANEY, MJ ;
VAUGHN, S ;
WHITE, K .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (12) :647-649
[6]   A THERMALLY ASSISTED FIELD-EMISSION ELECTRON-BEAM EXPOSURE SYSTEM [J].
NAKAZAWA, H ;
TAKEMURA, H ;
ISOBE, M ;
NAKAGAWA, Y ;
SHEARER, MH ;
THOMPSON, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :2019-2022
[7]  
NGUYEN L, 1993, IEEE MTT-S, P345, DOI 10.1109/MWSYM.1993.276807
[8]  
ROHDIN H, 1995, SEVENTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, P73, DOI 10.1109/ICIPRM.1995.522079
[9]   A NOVEL ELECTRON-BEAM EXPOSURE TECHNIQUE FOR 0.1-MU-M T-SHAPED GATE FABRICATION [J].
SAMOTO, N ;
MAKINO, Y ;
ONDA, K ;
MIZUKI, E ;
ITOH, T .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (06) :1335-1338
[10]  
Tiberio R. C., 1989, Proceedings of the SPIE - The International Society for Optical Engineering, V1089, P124, DOI 10.1117/12.968521