FABRICATION OF MOS NANOSTRUCTURE BY EMPLOYING ELECTRON-BEAM LITHOGRAPHY AND ANISOTROPIC WET ETCHING OF SILICON

被引：6

作者：

SHIMIZU, K

ODA, S

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152, O-okayama

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 3A期

关键词：

NANOSTRUCTURE; ULTRAFINE STRUCTURE; MOS STRUCTURE; ANISOTROPIC WET ETCHING; ELECTRON BEAM LITHOGRAPHY; SILICON;

D O I：

10.1143/JJAP.30.L415

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrafine metal/SiO2/Si (MOS) structures have been fabricated by combining the technologies of electron beam lithography and anisotropic wet etching of Si. The etching condition has been optimized in terms of the composition of the etchant and temperature. A MOS structure of narrower than 20 nm with specular sidewalls has been obtained, which will be useful for the application of ultrasmall devices such as quantum effect transistors of Si.

引用

页码：L415 / L417

页数：3

共 6 条

[1]

Antoniadias D. A., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P558

[2] PHYSICAL CONSIDERATIONS IN VACUUM MICROELECTRONICS DEVICES [J].